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| AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO3700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO3700 is Pb-free (meets ROHS & Sony 259 specifications). AO3700L is a Green Product ordering option. AO3700 and AO3700L are electrically identical. Features VDS (V) = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65m (VGS = 10V) RDS(ON) < 75m (VGS = 4.5V) RDS(ON) < 160m (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A SOT-23-5 Top View G S A 1 2 3 5 4 D K G D K S A Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C ID Continuous Drain Current A TA=70C IDM Pulsed Drain Current B VKA Schottky reverse voltage TA=25C IF Continuous Forward Current A TA=70C IFM Pulsed Forward Current B Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A MOSFET 30 12 3.3 2.6 10 Schottky Units V V A TA=25C TA=70C PD TJ, TSTG Symbol RJA RJL RJA RJL 1.15 0.7 -55 to 150 Typ 80.3 117 43 109.4 136.5 58.5 20 2 1 10 0.92 0.59 -55 to 150 Max 110 150 80 135 175 80 V A W C Units C/W Steady-State Steady-State t 10s Steady-State Steady-State C/W Alpha & Omega Semiconductor, Ltd. AO3700 Electrical Characteristics (T =25C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=3.3A TJ=125C 1 10 1.4 51 64 60 100 11.7 0.81 Min 30 1 5 100 2 65 90 75 160 1 2.5 270 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V mA pF 10 ns nC gFS VSD IS VGS=4.5V, ID=3.0A VGS=2.5V, ID=1A Forward Transconductance VDS=5V, ID=3.3A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm CT trr Qrr Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 226 39 29 1.4 4.6 1.4 0.55 2.6 3.2 14.5 2.1 10.2 3.8 0.39 2.5 5.5 VGS=4.5V, VDS=15V, ID=3.3A VGS=10V, VDS=15V, RL=4.7, RGEN=6 IF=3.3A, dI/dt=100A/s IF=3.3A, dI/dt=100A/s IF=0.5A VR=16V VR=16V, TJ=125C VR=10V IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s 13 0.5 0.1 20 34 5.2 0.8 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0: October 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 Alpha & Omega Semiconductor, Ltd. AO3700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10V 12 3.5V 4V 6V 9 ID (A) 3V 6 ID(A) 10 8 VDS=5V 6 VGS=2.5V 3 4 125C 2 51 60 100 25C 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 0 0.5 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 1 3.5 200 175 150 RDS(ON) (m) 125 100 75 50 25 0 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 125 80 RDS(ON) (m) 70 25C 60 50 40 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=3.3A VGS=10V VGS=4.5V VGS=2.5V 1.8 VGS=4.5V Normalized On-Resistance 1.6 1.4 1.2 1 ID=3.0A 270 1.7 VGS=10V 3.6 ID=3.3A VGS=2.5V ID=1A 0.8 0 25 50 75 100 125 13 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 IS (A) 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C Alpha & Omega Semiconductor, Ltd. AO3700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VDS=15V ID=3.3A 4 Capacitance (pF) 400 350 300 250 200 150 100 50 0 0 2 Q (nC) 3 4 g Figure 7: Gate-Charge Characteristics 1 5 0 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 30 Crss Ciss VGS (Volts) 3 2 51 60 100 Coss 1 100.0 TJ(Max)=150C TA=25C 10.0 ID (Amps) 1ms 1.0 1s 10s DC 0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 100 10ms 0.1s 100s RDS(ON) limited 10s 270 20 TJ(Max)=150C TA=25C 1.7 3.6 15 Power (W) 10 5 0 0.001 13 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD Ton Single Pulse 0.1 T 0.01 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 Alpha & Omega Semiconductor, Ltd. AO3700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125C Capacitance (pF) 1 IF (Amps) 80 60 40 20 25C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF (Volts) Figure 12: Schottky Forward Characteristics 0 0 5 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 100 f = 1MHz 0.1 0.01 0.5 1.0E-02 0.4 VF (Volts) IF=0.5A 0.3 Leakage Current (A) 1.0E-03 1.0E-04 VR=16V 0.2 1.0E-05 0.1 0 25 50 75 100 Temperature (C) 125 150 1.0E-06 0 25 50 75 100 125 150 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=135C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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